急求：一篇关于应变硅方向的中英文对照论文

IBM和英特尔的研究人员与工程师们将在下周于旧金山举行的国际电子设备会议(IEDM)上详细阐述他们在应变硅技术(strained silicon)方面取得的进展。应变硅技术是一项新的制造技术，预计可把处理器的性能提高20%。

应变硅技术与双闸极式(double-gate)和三闸极式(triple-gate)晶体管，绝缘件(SOI)硅片等最新设计思想一样，使芯片制造商们能够维持摩尔定律建立起来的性能曲线，这个半
导体行业的原理称：每两年制造商们就会把芯片内晶体管的数目增加一倍。但是处理器的性能提高的同时又产生了其它问题，比如能量消耗更大等，这就促使设计者们去寻找有创造性的解决方案。

IBM and Intel researchers and engineers in San Francisco next week at the International Electron Devices Meeting (IEDM) in detail in the strained silicon technology (strained silicon) the progress made. Strained silicon technology is a new manufacturing technology, is expected to improve the performance of the processor by 20%.

Strained silicon technology and a very双闸type (double-gate) and the three-gate (triple-gate) transistor, insulation (SOI) wafers, like the latest design concepts, so that chip manufacturers can set up to maintain the Moore's Law performance curve, the semi -
Conductor industry, said principle: every two years, manufac