UC知道微电子英文文章翻译4
来源：百度知道 编辑：UC知道 时间：2024/07/08 02:15:34
Fig.2 Hydrogen distributions in the a-Si:H/SiNx:H structures on a Cz-Si substrate as measured by nuclear reaction analyses both prior to and after annealing for 4 minutes
From the as-deposited H distribution, shown as the solid line with open circles in the figure, the interfaces between the Si substrate and the a-Si:H film, and between the a-Si:H film and the SiNx:H layer is clearly revealed as the positions in the sample where the H concentration changes markedly. Upon inspection of the H distribution in the structures annealed at temperatures up to 550°C, it is seen that the H penetration in the Si substrate is increased as compared to the as-deposited sample Thus, it is indicated that H is released towards the substrate, either directly from the a-Si:H film or from the overlying SiNx:H. It is seen from Fig.2 that the H concentration in the SiNx:H decreases upon annealing, however H may also effuse out towards the atmosphere. Nevertheless, it is seen from the figure that the H
From the as-deposited H distribution, shown as the solid line with open circles in the figure, the interfaces between the Si substrate and the a-Si:H film, and between the a-Si:H film and the SiNx:H layer is clearly revealed as the positions in the sample where the H concentration changes markedly. Upon inspection of the H distribution in the structures annealed at temperatures up to 550°C, it is seen that the H penetration in the Si substrate is increased as compared to the as-deposited sample Thus, it is indicated that H is released towards the substrate, either directly from the a-Si:H film or from the overlying SiNx:H. It is seen from Fig.2 that the H concentration in the SiNx:H decreases upon annealing, however H may also effuse out towards the atmosphere. Nevertheless, it is seen from the figure that the H
图2氢气分布在A - Si ： H的/氮化硅： H的结构，对直拉硅衬底作为衡量核反应分析，无论之前和之后退火4分钟
从作为沉积h分布，显示为实线，与开放的圈子中的数字，接口之间的Si衬底以及A - Si ： H薄膜之间，以及在A Si ： H薄膜和氮化硅： H的层显然揭示了作为职位，在样本的H浓度的变化尤其显着。经查验后的h分布在结构退火温度高达550 ℃ ，这是可见的H渗透在Si衬底上是增加相比，以作为沉积样本，因此，这是表示， H是发表对衬底上，无论是直接从A - Si ： H薄膜或从覆氮化硅：每小时它是从图2表示的H浓度在氮化硅： H的跌幅后，退火，但h也可能涌出了对大气中。不过，它是从数字的H浓度在A - Si ： H薄膜并不显着降低，为anneals可达450 ° C时，说明有可能在局部释放的H从氮化硅： H的对衬底。退火后，在温度超过450 ° C时，对H浓度在A - Si ： H薄膜观察，以减少，但目前仍有相当数量的H在分界面区域的衬底。据认为，这一释放的H对衬底的是，至少部分责任，为增加有效寿命测量退火后可达500 ℃ 。 H在亚地区的基底很可能重新分配很容易在这些温度下，可能导致钝化Si悬挂债券在分界面区域。在更高的温度anneals ，破损泗H键及外积液的H透过氮化硅： H的层都可能引起崩溃，在表面钝化，在温度约为600 ° C时，从表面上完全缺乏的H低于氮化硅： H的层在NRA的测量这些样品。